Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer
1
Department of Materials Science and Engineering, National Dong Hwa University, Hualien 97401, Taiwan
2
Department of Mechanical Engineering, Politeknik Negeri Jakarta, Depok 16424, Indonesia
3
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
4
Department of Electronic Systems Research Division, Chung-Shan Institute of Science & Technology, Tao-Yan 325, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Filippo Giannazzo
Nanomaterials 2021, 11(6), 1406; https://doi.org/10.3390/nano11061406
Received: 4 May 2021 / Revised: 22 May 2021 / Accepted: 23 May 2021 / Published: 26 May 2021
Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp2-bonded two-dimensional (2D) MoS2 buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform and ~5 nm GaN thin films on layered 2D MoS2 at different substrate temperatures of 500, 600 and 700 °C, respectively. The surface morphology, surface chemical composition, crystal microstructure, and optical properties of the GaN thin films were identified experimentally by using both in situ and ex situ characterizations. During the MBE growth with a higher substrate temperature, the increased surface migration of atoms contributed to a better formation of the GaN/MoS2 heteroepitaxial structure. Therefore, the crystallinity and optical properties of GaN thin films can obviously be enhanced via the high temperature growth. Likewise, the surface morphology of GaN films can achieve a smoother and more stable chemical composition. Finally, due to the van der Waals bonding, the exfoliation of the heterostructure GaN/MoS2 can also be conducted and investigated by transmission electron microscopy. The largest granular structure with good crystallinity of the GaN thin films can be observed in the case of the high-temperature growth at 700 °C.
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Keywords:
molybdenum disulfide; gallium nitride; van der Waals epitaxy; pulsed laser deposition; molecular beam epitaxy
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MDPI and ACS Style
Susanto, I.; Tsai, C.-Y.; Ho, Y.-T.; Tsai, P.-Y.; Yu, I.-S. Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer. Nanomaterials 2021, 11, 1406. https://doi.org/10.3390/nano11061406
AMA Style
Susanto I, Tsai C-Y, Ho Y-T, Tsai P-Y, Yu I-S. Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer. Nanomaterials. 2021; 11(6):1406. https://doi.org/10.3390/nano11061406
Chicago/Turabian StyleSusanto, Iwan, Chi-Yu Tsai, Yen-Teng Ho, Ping-Yu Tsai, and Ing-Song Yu. 2021. "Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer" Nanomaterials 11, no. 6: 1406. https://doi.org/10.3390/nano11061406
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